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| VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 4000 25x103 2.1 0.58 2800 V A A V m V Asymmetric Gate turn-off Thyristor 5SGA 40L4501 Doc. No. 5SYA1208-02 March 05 * Patented free-floating silicon technology * Low on-state and switching losses * Annular gate electrode * Industry standard housing * Cosmic radiation withstand rating Blocking Maximum rated values 1) Parameter Repetitive peak off-state voltage Repetitive peak reverse voltage Permanent DC voltage for 100 FIT failure rate Characteristic values Symbol Conditions VDRM VRRM VDC-link Ambient cosmic radiation at sea level in open air. VGR 2 V min typ max 4500 17 2800 Unit V V V Parameter Repetitive peak off-state current Repetitive peak reverse current Symbol Conditions IDRM IRRM VD = VDRM, VGR 2 V VR = VRRM, RGK = min typ max 100 50 Unit mA mA Mechanical data Maximum rated values 1) Parameter Mounting force Characteristic values Symbol Conditions Fm Symbol Conditions Dp H m Ds Anode to Gate 0.1 mm min 36 min 25.6 33 typ 40 typ 85 max 44 max 26.1 1.5 Unit kN Unit mm mm kg mm mm Parameter Pole-piece diameter Housing thickness Weight Surface creepage distance Air strike distance Da Anode to Gate 14 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SGA 40L4501 GTO Data On-state Maximum rated values 1) Parameter Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral Max. peak non-repetitive surge current Limiting load integral Characteristic values Symbol Conditions IT(AV)M IT(RMS) ITSM I2t ITSM I2t Symbol Conditions VT V(T0) rT IH 1) min typ max 1000 1570 Unit A A 3 Half sine wave, TC = 85 C tp = 10 ms, Tvj = 125C, sine wave After Surge: VD = VR = 0 V tp = 1 ms, Tvj = 125C, sine wave After Surge: VD = VR = 0 V 25x10 A A2s A A2s Unit V V m A 3.1x10 40x10 6 3 800x10 min typ max 4.4 2.1 0.58 100 3 Parameter On-state voltage Threshold voltage Slope resistance Holding current IT = 4000 A, Tvj = 125C Tvj = 125C IT = 400...5000 A Tvj = 25C Turn-on switching Maximum rated values Parameter Critical rate of rise of onstate current Critical rate of rise of onstate current Min. on-time Symbol Conditions diT/dtcr diT/dtcr ton Tvj = 125C, IT = 4000 A, IGM = 50 A, diG/dt = 40 A/s f = 200 Hz f = 1 Hz min typ max 500 1000 Unit A/s A/s s VD = 0.5 VDRM, Tvj = 125 C IT = 4000 A, di/dt = 300 A/s, IGM = 50 A, diG/dt = 40 A/s, CS = 6 F, RS = 5 100 Characteristic values Parameter Turn-on delay time Rise time Turn-on energy per pulse Symbol Conditions td tr Eon VD = 0.5 VDRM, Tvj = 125 C IT = 4000 A, di/dt = 300 A/s, IGM = 50 A, diG/dt = 40 A/s, CS = 6 F, RS = 5 min typ max 2.5 5 3.3 Unit s s J Turn-off switching Maximum rated values 1) Parameter Max. controllable turn-off current Min. off-time Symbol Conditions ITGQM toff VDM VDRM, diGQ/dt = 40 A/s, CS = 6 F, LS 0.3 H VD = 0.5 VDRM, Tvj = 125 C VDM VDRM, diGQ/dt = 40 A/s, ITGQ = ITGQM, RS = 5 , CS = 6 F, LS = 0.3 H min typ max 4000 Unit A s 100 Characteristic values Parameter Storage time Fall time Turn-on energy per pulse Peak turn-off gate current Symbol Conditions tS tf Eoff IGQM VD = 0.5 VDRM, Tvj = 125 C VDM VDRM, diGQ/dt = 40 A/s, ITGQ = ITGQM, RS = 5 , CS = 6 F, LS = 0.3 H min typ max 27 3 14 1100 Unit s s J A ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1208-02 March 05 page 2 of 9 5SGA 40L4501 Gate Maximum rated values 1) Parameter Repetetive peak reverse voltage Repetetive peak reverse current Characteristic values Symbol Conditions VGRM IGRM VGR = VGRM min typ max 17 50 Unit V mA Parameter Gate trigger voltage Gate trigger current Symbol Conditions VGT IGT 1) min typ 1.2 4 max Unit V A Tvj = 25C, VD = 24 V, RA = 0.1 Thermal Maximum rated values Parameter Junction operating temperature Storage temperature range Characteristic values Symbol Tvj Tstg Symbol Rth(j-c) Rth(j-c)A Rth(j-c)C Conditions min -40 -40 typ max 125 125 Unit C C Unit K/kW K/kW K/kW K/kW K/kW Parameter Thermal resistance junction to case Conditions Double side cooled Anode side cooled Cathode side cooled Single side cooled Double side cooled min typ max 11 20 25 6 3 Thermal resistance case to heatsink (Double side cooled) Rth(c-h) Rth(c-h) Analytical function for transient thermal impedance: Zth(j - c)(t) = Ri(1 - e - t/ i ) i =1 2 1.974 0.0939 i Ri(K/kW) i(s) 1 7.313 0.5400 3 1.218 0.0117 4 0.501 0.0036 Fig. 1 Transient thermal impedance, junction to case n ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1208-02 March 05 page 3 of 9 5SGA 40L4501 Fig. 2 On-state characteristics Fig. 3 Average on-state power dissipation vs. average on-state current Fig. 4 Surge current and fusing integral vs. pulse width ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1208-02 March 05 page 4 of 9 5SGA 40L4501 Fig. 5 Forward blocking voltage vs. gate-cathode resistance Fig. 6 Static dv/dt capability; forward blocking voltage vs. neg. gate voltage or gate cathode resistance Fig. 7 Forward gate current vs. forard gate voltage Fig. 8 Gate trigger current vs. junction temperature ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1208-02 March 05 page 5 of 9 5SGA 40L4501 Fig. 9 Turn-on energy per pulse vs. on-state current and turn-on voltage Fig. 10 Turn-on energy per pulse vs. on-state current and current rise rate Common Test conditions: diG/dt CS RS Tj = 40 A/s = 6 F =5 = 125 C Definition of Turn-on energy: 20 s E on = V 0 D ITdt (t = 0, IG = 0.1 IGM ) Definition of Turn-off energy: E off = 40 s V 0 D ITdt ( t = 0, IT = 0.9 ITGQ ) Fig. 11 Turn-on energy per pulse vs. on-state current and turn-on voltage ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1208-02 March 05 page 6 of 9 5SGA 40L4501 Eoff [J] 18 16 14 12 10 8 6 QGQa 4 2 0 0 500 1000 1500 2000 2500 3000 3500 1/2 VDRM 4000 2000 0 Conditions: VD = 1/2VDRM di GQ/dt = 40 A/ s CS = 6 F, R S = 5 Tj = 125C QGQa [A] 18000 16000 Eoff [J] 14 12 10 8 6 4 2 0 0 500 1000 1500 2000 2500 3000 3500 4000 ITGQ [A] Conditions: VD = 1/2 VDRM , VDM = VDRM diGQ /dt =40 A/s RS = 5 T j = 125 C VDM = VDRM 14000 12000 10000 CS = 6F 3/4 VDRM 8000 6000 4000 ITGQ [A] Fig. 12 Turn-off energy per pulse vs. turn-off current and peak turn-off voltage, extracted gate charge vs. turn-off current C s [F] 6 Condition: VD = 1/2VDRM , VDM = VDRM diGQ /dt = 40 A/s RS = 5 , LS 300 nH Fig. 13 Turn-off energy per pulse vs. turn-off current and snubber capacitance Eoff [J],ts [s] 22 20 18 16 14 12 55 50 45 40 35 30 25 20 15 10 5 0 -10 0 Condition: V = 1/2 VDRM , VDM = VDRM D I GQ = 4000 A, di Q /dt = 40 A/s T G Tj = 125 C IGQM [A] 1100 IGQM 1000 900 800 700 Eoff 600 500 5 4 3 10 8 6 tS 400 300 200 100 2 4 2 1 1000 1500 2000 2500 3000 3500 4000 IGQM [A] 0 10 202530 40 50 60 707580 0 90 100 110 120 125 Tj [C] Fig. 14 Required snubber capacitor vs. max allowable turn-off current Fig. 15 Turn-off energy per pulse, storage time and peak turn-off gate current vs. junction temperature IGQM [A] ts [s] 60 55 50 45 40 35 30 25 20 15 10 5 0 0 10 20 30 40 50 Conditions: ITGQ = 3000 A T j = 125 C ts [s] 60 IGQM [A] 1200 IGQM 1200 1000 50 IGQM 1000 800 40 800 tS 600 30 tS 600 400 20 Conditions: diGQ/dt =40 A/s T j = 125 C 400 200 10 200 0 60 diGQ /dt [A/s] 0 0 500 1000 1500 2000 2500 3000 3500 0 4000 ITGQ [A] Fig. 16 Storage time and peak turn-off gate current vs. neg. gate current rise rate Fig. 17 Storage time and peak turn-off gate current vs. turn-off current ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1208-02 March 05 page 7 of 9 5SGA 40L4501 Fig. 18 General current and voltage waveforms with GTO-specific symbols ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1208-02 March 05 page 8 of 9 5SGA 40L4501 Fig. 19 Outline drawing; all dimensions are in millimeters and represent nominal values unless stated otherwise Reverse avalanche capability In operation with an antiparallel freewheeling diode, the GTO reverse voltage VR may exceed the rate value VRRM due to stray inductance and diode turn-on voltage spike at high di/dt. The GTO is then driven into reverse avalanche. This condition is not dangerous for the GTO provided avalanche time and current are below 10 s and 1000 A respectively. However, gate voltage must remain negative during this time. Recommendation : VGR = 10... 15 V. Related documents: Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Cosmic Ray Specification of enviromental class for pressure contact GTO, STORAGE available on request, please contact factory Specification of enviromental class for pressure contact GTO, TRANSPORTATION available on request, please contact factory Please refer to http://www.abb.com/semiconductors for actual versions. 5SYA 2036 5SYA 2046 5SZK 9104 5SZK 9105 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1208-02 March 05 |
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